我們研發(fā)并生產(chǎn)的2-6英半導體級以及半絕緣級高純度砷化鎵晶體和晶片被廣泛應(yīng)用于半導體集成電路以及LED通用照明等領(lǐng)域。
Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.
半導體砷化鎵規(guī)格 Specifications of semi-conducting GaAs wafer
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生長方法 |
VGF |
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摻雜類型 |
P型：鋅 |
N型：硅 |
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晶片形狀 |
圓形（尺寸2、3、4、6英寸） |
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晶向 |
(100)±0.5° |
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* Other Orientations maybe available upon request |
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Dopant |
硅 （N 型） |
鋅 （P 型） |
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載流子濃度 |
( 0.8-4) × 1018 |
( 0.5-5) × 1019 |
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遷移率 |
( 1-2.5) × 103 |
50-120 |
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位錯 |
100-5000 |
3,000-5,000 |
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直徑 |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
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厚度 |
350±25 |
625±25 |
625±25 |
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TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
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Polish* |
E/E, |
E/E, |
E/E, |
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*E=Etched, P=Polished（*E=腐蝕, P=拋光） |
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**If needed by customer |
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半絕緣砷化鎵 Specifications of semi-insulating GaAs wafer
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生長方法 Growth Method |
VGF |
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摻雜類型 Dopant |
SI 型：碳 SI Type: Carbon |
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晶片形狀 Wafer Shape |
圓形（尺寸2、3、4、6英寸） Round (DIA: 2", 3", 4", 6") |
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晶向 Surface Orientation * |
(100)±0.5° |
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* Other Orientations maybe available upon request 其他晶向要求可根據(jù)客戶需求加工 |
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電阻率 Resistivity (Ω.cm) |
≥ 1 × 107 |
≥ 1 × 108 |
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遷移率 Mobility (cm2/V.S) |
≥ 5,000 |
≥ 4,000 |
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位錯 Etch Pitch Density (cm2) |
1,500-5,000 |
1,500-5,000 |
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晶片直徑 Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
150±0.3 |
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厚度 Thickness (μm) |
350±25 |
625±25 |
625±25 |
675±25 |
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TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 15 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
NOTCH |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
N/A |
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Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
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*E=Etched, P=Polished （*E=腐蝕, P=拋光） |
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**If needed by customer 根據(jù)客戶需要 |
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